dated : 02/12/2005 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 2sc1359 npn silicon epitaxial planar transistor for switching and af amplifier applications. the transistor is subdivided into one group, according to its dc current gain. on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage v cbo 30 v collector emitter voltage v ceo 20 v emitter base voltage v ebo 5 v collector current i c 100 ma power dissipation p tot 250 mw junction temperature t j 150 o c storage temperature range t s -55 to +150 o c characteristics at t amb = 25 o c parameter symbol min. typ. max. unit dc current gain at v ce =6v, i c =1ma h fe 150 - 650 - collector base breakdown voltage at i c =100a v (br)cbo 30 - - v collector emitter breakdown voltage at i c =10ma v (br)ceo 20 - - v emitter base breakdown voltage at i e =10a v (br)ebo 5 - - v collector cutoff current at v cb =30v i cbo - - 0.1 a emitter cutoff current at v eb =3v i ebo - - 0.1 a collector saturation voltage at i c =100ma, i b =10ma v ce(sat) - - 0.3 v gain bandwidth product at v ce =6v, i c =10ma f t - 125 - mhz output capacitance at v cb =6v, f=1mhz c ob - 1.8 - pf noise figure at v ce =6v, i e =0.5ma, f=1khz, r s =500 ? at nf - 4 - db
dated : 02/12/2005 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 2sc1359 200 50 tamb ( c) p t o t ( m w ) 0 50 25 100 150 125 75 100 150 total power dissipation vs. ambient temperature 300 250 free air normalized collector cutoff current vs. ambient temperature tamb ( c) n o r m a l i z e d c o l l e c t o r c u t o f f c u r r e n t i c b o ( t a ) i c b o ( t a = 2 5 c ) 0 1 40 20 60 10 100 1000 10000 140 100 80 120 160 1 v ce , v 0.8 20 0 0 0.4 1.6 i b =0.1ma 1.2 2.0 2 0 10 0 50 ib=0.5 a 20 30 v ce , v 40 collector current vs. collector emitter voltage collector current vs. collector emitter voltage i c - m a 40 60 100 80 0.5 0.2 0.3 0.4 1.0 0.9 0.6 0.8 0.7 6 4 i c - m a 10 8 3.5 3 2 2.5 1.5 4.5 4 ta=75 c 25 c -25 c collector current, ma 0.01 200 d c c u r r e n t g a i n 80 40 0 160 120 280 240 320 360 200 d c c u r r e n t g a i n 10 1 0.1 collector current, ma 0.1 0.01 100 0.5v 1.0v 2.0v 3.0v 80 40 0 160 120 v ce =6.0v pulse d h fe - i c 280 240 360 320 100 110 h fe - i c v ce =6v pulse d
dated : 02/12/2005 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 2sc1359 0.5 0.1 0.01 0.3 0.2 0.4 0.8 v be , v 0.6 0.7 0.9 1 t a = 7 5 c collector current vs. base emitter voltage 10 1 i c - m a 100 v ce =6v pulsed - 2 5 c 2 5 c normalized h-parameters vs. collector current n o r m a l i z e d h - p a r a m e t e r s 0.1 0.1 1 hoe hfe hre 10 hie ic , ma 1 10 hre hie he(ic) he(ic=1ma) vce=6v f=1khz he= hfe hoe 20 0.1 vce(sat) v b e ( s a t ) , v v c e ( s a t ) , v f t - m h z 100 6v 0.1 0.01 collector current, ma 1 100 10 ic/ib=10 emitter current, ma -0.1 10 -1 -10 1v 2v -100 1 10 c ollector and base saturation voltage vs. collector current vbe(sat) pulsed ic/ib=10 50 20 50 vce=10v 1000 10000 f t - i e c i b , c o b - p f 0.1 0.1 1 veb, vcb - v 1 cob(ie=0) 10 100 10 100 v eb, v cb vs. cib, cob f=1mhz cib(ic=0) s m a l l s i g n a l c u r r e n t g a i n dc current gain 0 200 400 200 600 400 800 1000 small signal current gain vs. dc current gain 800 600 1000 vce=6v ic=1ma f=1khz
dated : 02/12/2005 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 2sc1359 vce - v normalized h-parameters vs. collector emitter voltage hfe - small signal current gain input impedance, voltage feedback ratio and output admittance vs. small signal current gain hoe - output admittance ( s) 0 20 40 60 80 100 hre - voltage feedback ratio (x10 ) hie - input impedance(k ) 0 10 20 30 40 0 200 20 10 40 30 -4 50 50 vce=6v ic=1ma f=1khz 400 600 hoe hre hie 1000 800 normalized h- parameters hoe 0 1 hfe 2 10 hie hre 3 ic=1ma f=1khz he= he(vce) he(vce=6v) hie hoe 20 hre hfe 30
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